Study of degradation in InGaP/InGaAs/Ge multi-junction solar cell characteristics due to irradiation-induced deep level traps using finite element analysis

摘要

We investigated the influence of irradiation-induced deep level traps on the performance of 3J solar cell using two-dimensional numerical simulations. Modeling of solar cell degradation has been performed by systematically considering the trap levels in the top InGaP and middle InGaAs subcells. At the trap concentration of 1 x 10(16) cm-3, simulation results show a conversion efficiency of 26% for AMO spectrum (1-sun). The results obtained demonstrate that the trap level in p-base InGaAs causes more degradation compared to p-base InGaP region. The combination of 1 x 10(16) cm(-3) trap concentration and 1 x 10(4) cm s(-1) surface recombination velocity is the point beyond which significant reduction in solar cell output parameters was observed. For the same trap concentration and interface recombination values, 30% conversion efficiency was achieved at concentrated sunlight with current matching among the top and middle cells.