首页> 外文期刊>Solar Energy >A comparative study on thermally and laser annealed copper and silver doped CdTe thin film solar cells
【24h】

A comparative study on thermally and laser annealed copper and silver doped CdTe thin film solar cells

机译:热和激光退火掺杂铜和银的CdTe薄膜太阳能电池的比较研究

获取原文
获取原文并翻译 | 示例
       

摘要

Copper (Cu) and silver (Ag) are the potential dopants that could enhance p-type doping of polycrystalline cadmium telluride (CdTe) thin films to be used in CdTe based solar cells. In this work, the effect of doping concentration of Ag and Cu in both thermal and laser anneal process of doping to CdTe thin film solar cells' electrical performance were investigated. CdTe thin films of 3 mu m thickness were deposited using the close spaced sublimation (CSS) process and subjected to Cu and Ag doping process through dip coating in copper (II) chloride (CuCl2) and silver nitrate (AgNO3) solution, respectively at different concentration range followed by either thermal or laser annealing. Thermally annealed CdTe thin films were treated in convection oven, whereas laser annealing was carried out by illuminating the samples with pulsed neodymium-doped yttrium aluminium garnet (Nd:YAG) laser at wavelength of 532 nm. Fabricated solar cells were electrically characterized by light current-voltage (J-V) and capacitance-voltage (C-V) measurements. J-V measurement demonstrates that Cu doped CdTe solar cells are having better electrical performance as compared to Ag doped ones. The effect of increasing dopant solution concentrations seems to have consistent trend with the increase of J-V parameters as identified in this work. C-V measurement shows that Cu doped CdTe films has higher doping capability with the highest acceptor concentration of 1.5 x 10(14) cm(-3) compared to Ag doped CdTe films of 8.1 x 10(13) cm(-3). In addition, laser annealing finds lower J-V performance and acceptor concentration of Cu and Ag doped CdTe solar cells with limitations in smaller process space for surface annealing as well as optimization.
机译:铜(Cu)和银(Ag)是潜在的掺杂剂,可以增强用于基于CdTe的太阳能电池中的多晶碲化镉(CdTe)薄膜的p型掺杂。在这项工作中,研究了Ag和Cu的掺杂浓度在热和激光退火过程中对CdTe薄膜太阳能电池电性能的影响。使用近距离升华(CSS)工艺沉积3μm厚的CdTe薄膜,并通过分别在氯化铜(II)和硝酸银(AgNO3)溶液中浸涂的方式分别进行Cu和Ag掺杂工艺。浓度范围,然后进行热退火或激光退火。热退火的CdTe薄膜在对流烘箱中进行处理,而激光退火则通过用掺钕钕钇铝石榴石(Nd:YAG)脉冲激光照射波长为532 nm的样品进行。通过光电流-电压(J-V)和电容-电压(C-V)测量对制成的太阳能电池进行电气表征。 J-V测量表明,与掺Ag的相比,掺Cu的CdTe太阳能电池具有更好的电性能。正如本工作中确定的那样,增加掺杂剂溶液浓度的效果似乎与J-V参数的增加具有一致的趋势。 C-V测量表明,与Ag掺杂的CdTe膜的8.1 ​​x 10(13)cm(-3)相比,Cu掺杂的CdTe膜具有更高的掺杂能力,最高受主浓度为1.5 x 10(14)cm(-3)。另外,激光退火发现较低的J-V性能和掺杂Cu和Ag的CdTe太阳能电池的受主浓度,在较小的表面退火和优化工艺空间中受到限制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号