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Optical and structural properties of co-evaporated CuIn_(0.5)Al_(0.5)Se_2 thin films

机译:共蒸发CuIn_(0.5)Al_(0.5)Se_2薄膜的光学和结构性质

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CuIn_(0.5)Al_(0.5)Se_2 thin films are successfully prepared using a four-source co-evaporation technique on soda-lime glass substrates held at a substrate temperature of 673 K. Powder x-ray diffraction studies reveal that the films are polycrystalline in nature with chalcopyrite structure. The optical band gaps, calculated from spectral transmittance data, are found to be 1.56 ± 0.02 eV, 1.60 ± 0.02 eV and 1.85 ± 0.02 eV. Considering the three fold optical structure of chalcopyrite compounds, these are attributed to fundamental absorption and additional transitions arising out of crystal field and spin-orbit interactions. The crystal field (Δ_(CF)) and spin-orbit (Δ_(SO)) splitting parameters deduced from these optical band gaps are found to be -0.06 eV and 0.26 eV, respectively. The deformation potential estimated by using a quasi-cubic model is found to be -2.0 eV. The percentage of hybridization of the orbitals was determined using a linear hybridization model. The films are p-type conducting with a room temperature resistivity of 80 Ω cm.
机译:使用四源共蒸发技术在衬底温度为673 K的钠钙玻璃衬底上成功制备了CuIn_(0.5)Al_(0.5)Se_2薄膜。粉末X射线衍射研究表明该薄膜是多晶的本质上具有黄铜矿结构。根据光谱透射率数据计算出的光学带隙为1.56±0.02 eV,1.60±0.02 eV和1.85±0.02 eV。考虑到黄铜矿化合物的三重光学结构,这些归因于基本吸收以及由于晶场和自旋轨道相互作用而产生的其他跃迁。由这些光学带隙推导的晶体场(Δ_(CF))和自旋轨道(Δ_(SO))分裂参数分别为-0.06eV和0.26eV。发现使用准三次模型估计的变形势为-2.0 eV。使用线性杂交模型确定轨道的杂交百分比。所述膜是p型导电的,其室温电阻率为80Ωcm。

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