Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications

摘要

We report on the quasi-monolithic integration of unpackaged high-power AlGaN/GaN HEMTs into a silicon basis, which finally will be the backbone and main part of an integrated circuit. Ⅲ/Ⅴ compound semiconductor devices fulfil special tasks which Si devices are unable to perform. For demonstration purposes we embedded high-power nitride semiconductor HEMTs in silicon substrates with planar electrical contacts using micromachining techniques. This enables integration of both unpackaged devices of different materials (e.g. high-power nitride semiconductor HEMTs) and devices made by thin film technology (e.g. resistors, inductors, etc), leading to a system-on-package on a cost-effective silicon substrate.