40 Gbps electroabsorption modulated DFB laser with tilted facet formed by dry etching

摘要

We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through the selective-area growth method. The facet reflection was not sufficiently removed by just depositing the anti-reflection coating so that low frequency resonance occurred by optical feedback from the facet to the DFB laser. A tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased significantly.