GaN-based light-emitting diodes with SiON_x on sidewalls

摘要

Flip-chip light-emitting diodes (LEDs) with SiON_x on sidewalls were investigated. Using a SiO_2 layer as the etching mask, the gallium nitride epitaxial layers were etched to form oblique sidewalls. On the LED sidewalls, there is a three-quarter-wave-thick SiON_x passivation layer. The refractive index of the SiON_x passivation layer is 1.58. At 20 mA current operation, the relative light output of the LEDs with SiON_x on sidewalls is ～8% higher than that of the LEDs without SiON_x on sidewalls.