Growth of p-type ZnO films and fabrication of ZnO photodiode-based UV detectors

摘要

In this work, Al-N-co-doped ZnO films were deposited on the smooth nucleation side of a freestanding diamond film by a radio-frequency (RF) reactive magnetron sputtering method. The influence of sputtering atmosphere and substrate temperature on the conduction type of ZnO films was studied. ZnO photodiodes were fabricated by depositing the Al-N-co-doped p-type ZnO films on the Al-doped n-type ZnO films. The ZnO photodiode exhibited the distinct rectifying current-voltage (I-V) characteristics with a turn-on voltage of ～2.0 V. The photodiode was used for UV detector application and the detector showed a significant discrimination between UV and the visible light.