机译:通过静态和高频测量表征Si衬底上的AlGaN / GaN MISHFET
Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia;
Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia;
Chair of Electromagnetic Theory, GaN Device Technology, RWTH University, D-52074 Aachen, Germany JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany;
JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Juelich, Germany;
Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia;
Chair of Electromagnetic Theory, GaN Device Technology, RWTH University, D-52074 Aachen, Germany JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany;
JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Juelich, Germany;
Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia Department of Microelectronics, University of Technology, SK-81219 Bratislava, Slovakia;
机译:Si衬底上的AlGaN / GaN单异质结构和AlGaN / GaN / AlGaN双异质结构场效应晶体管的材料生长和器件表征
机译:用碳掺杂的GaN /未掺杂的GaN多层缓冲结构抑制AlGaN / GaN MISHFET中的电流崩溃
机译:通过C-V和DLTS测量对硅衬底上的AlGaN / GaN FAT-HEMT中的陷阱进行电学表征
机译:在SiC基板上的AlGaN / GaN Hemt中的产生 - 重组缺陷,通过低频噪声测量和SIMS表征证明了
机译:微金属应用中通过金属有机气相外延生长在6H-SiC(0001)衬底上的GaN和AlGaN的生长,掺杂和表征。
机译:使用低Al组成的单个AlGaN层在Si衬底上生长高质量和均匀的AlGaN / GaN异质结构
机译:通过低频噪声测量和sIms表征证明siC衬底上alGaN / GaN HEmT的生成 - 复合缺陷