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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

机译:通过静态和高频测量表征Si衬底上的AlGaN / GaN MISHFET

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摘要

AlGaN/GaN/Si metal-insulator-semiconductor heterostructure field-effect transistors (MISHFETs) with SiN and Al_2O_3 gate insulators are characterized by static and high-frequency measurements, and their performance is compared with nonpassivated and SiN-passivated heterostructure field-effect transistors (HFETs). The saturation drain current increased from ~500 raA mm~(-1) for the HFETs to ~770 mA mm~(-1) for the MISHFETs. The peak extrinsic transconductance of the MISHFETs (147 mS mm~(-1) for 8 nm SiN and 220 mS mm~(-1) for 4 nm Al_2O_3) is higher than expected due to the increased gate-to-channel separation. Similarly, small signal microwave characterization yielded an increase in the current gain cut-off frequency (from 3.2 to 7.2 GHz) and the maximum frequency of oscillation (from 12.3 to 20.4 GHz) for the MISHFETs with 2 μm gate length compared to the HFET counterparts. Finally, the density of trap states, evaluated from the frequency-dependent conductance measurements, was ≈ 3 × 10~(12) cm~(-2) eV~(-1) for the HFETs but only =1.8 × 10~(12) cm~(-2) eV~(-1) for the MISHFETs. All of these demonstrate the capability of AlGaN/GaN MISHFETs of preparing high-performance and cost-effective devices for high-power microwave applications on a Si substrate.
机译:具有SiN和Al_2O_3栅绝缘体的AlGaN / GaN / Si金属绝缘体-半导体异质结构场效应晶体管(MISHFET)具有静态和高频测量特性,并且将其性能与非钝化和SiN钝化异质结场效应晶体管进行了比较(HFET)。饱和漏极电流从HFET的〜500 raA mm〜(-1)增加到MISHFET的〜770 mA mm〜(-1)。 MISHFET的峰值非本征跨导(对于8 nm SiN为147 mS mm〜(-1),对于4 nm Al_2O_3为220 mS mm〜(-1))由于预期的栅至沟道间距增加而高于预期。类似地,与HFET同行相比,具有2μm栅极长度的MISHFET的小信号微波表征可以提高电流增益截止频率(从3.2至7.2 GHz)和最大振荡频率(从12.3至20.4 GHz)。 。最后,根据频率相关的电导测量结果,HFET的陷阱态密度约为≈3×10〜(12)cm〜(-2)eV〜(-1),但仅为= 1.8×10〜(12) MISHFET的)cm〜(-2)eV〜(-1)。所有这些都证明了AlGaN / GaN MISHFET具有在Si基板上制备用于大功率微波应用的高性能且具有成本效益的器件的能力。

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  • 来源
    《Semiconductor science and technology》 |2009年第7期|83-87|共5页
  • 作者单位

    Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia;

    Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia;

    Chair of Electromagnetic Theory, GaN Device Technology, RWTH University, D-52074 Aachen, Germany JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany;

    JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Juelich, Germany;

    Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia;

    Chair of Electromagnetic Theory, GaN Device Technology, RWTH University, D-52074 Aachen, Germany JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany;

    JARA-Fundamentals of Future Information Technology, Juelich Aachen Research Alliance, Aachen, Germany Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Juelich, Germany;

    Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia Department of Microelectronics, University of Technology, SK-81219 Bratislava, Slovakia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 01:32:07

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