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What can we learn about the dynamics of transported spins by measuring shot noise in spin-orbit-coupled nanostructures?

机译:通过测量自旋轨道耦合纳米结构中的散粒噪声,我们可以从中获悉有关运输自旋的动力学的信息?

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摘要

We review recent studies of the shot noise of spin-polarized charge currents and pure spin currents in multiterminal semiconductor nanostructures, while focusing on the effects brought by the intrinsic Rashba spin-orbit (SO) coupling and/or extrinsic SO scattering off impurities in two-dimensional electron gas (2DEG) based devices. By generalizing the scattering theory of quantum shot noise to include the full spin-density matrix of electrons injected from a spin-filtering electrode, we show how decoherence and dephasing in the course of spin precession can lead to the substantial enhancement of the Fano factor (noise-to-current ratio) of spin-polarized charge currents. These processes are suppressed by decreasing the width of the diffusive Rashba wire, so that purely electrical measurement of the shot noise in a ferromagnetlSO-coupled-diffusive-wirelparamagnet setup can quantify the degree of quantum coherence of transported spin through a remarkable one-to-one correspondence between the purity of the spin state and the Fano factor. In four-terminal SO-coupled nanostructures, injection of unpolarized charge current through the longitudinal leads is responsible not only for the pure spin Hall current in the transverse leads, but also for nonequilibrium random time-dependent current fluctuations. The analysis of the shot noise of transverse pure spin Hall current and zero charge current, or transverse spin current and non-zero charge Hall current, driven by unpolarized or spin-polarized injected longitudinal charge current, respectively, reveals a unique experimental tool to differentiate between the intrinsic Rashba and extrinsic SO mechanisms underlying the spin Hall effect in 2DEG devices. When the intrinsic mechanisms responsible for spin precession start to dominate the spin Hall effect, they also enhance the shot noise of transverse spin and charge transport in multiterminal geometries. Finally, we discuss the shot noise of transverse spin and zero charge currents in the quantum-interference-driven spinrn Hall effect in ballistic four-terminal Aharonov-Casher rings realized using high-mobility 2DEG with the Rashba SO coupling. The modulation of the Rashba coupling by the gate electrode imprints the oscillatory signature of constructive and destructive spin interference around the ring on both the spin and charge shot noise, which differ from the corresponding oscillations of the spin Hall conductance, thereby revealing quantum-interference-driven temporal correlations between spin-resolved charge currents of opposite spins.
机译:我们回顾了最近对多端子半导体纳米结构中自旋极化电荷电流和纯自旋电流的散粒噪声的研究,同时重点研究了固有的Rashba自旋轨道(SO)耦合和/或非本征SO将杂质从两个杂质中散射出来所带来的影响二维电子气(2DEG)的设备。通过概括量子散粒噪声的散射理论以包括从自旋过滤电极注入的电子的完整自旋密度矩阵,我们展示了自旋进动过程中的去相干和相移如何导致Fano因子的显着增强(自旋极化充电电流的噪声与电流之比)。通过减小扩散性Rashba线的宽度可以抑制这些过程,因此,纯铁测量铁氧体SO耦合的扩散线顺磁体设置中的散粒噪声可以通过显着的一对一来量化传输自旋的量子相干程度。自旋态纯度与Fano因子之间的一种对应关系。在四端子SO耦合纳米结构中,通过纵向引线注入的非极化电荷电流不仅负责横向引线中的纯自旋霍尔电流,而且还负责非平衡随时间变化的随机电流波动。对分别由非极化或自旋极化的纵向注入电荷电流驱动的横向纯自旋霍尔电流和零电荷电流或横向自旋电流和非零电荷霍尔电流的散粒噪声的分析揭示了一种独特的实验工具,可以区分2DEG器件中自旋霍尔效应背后的固有Rashba和外部SO机制之间的关系。当负责自旋进动的内在机制开始主导自旋霍尔效应时,它们还会增强横向旋转自旋的散粒噪声和多端子几何结构中的电荷传输。最后,我们讨论了使用高迁移率2DEG和Rashba SO耦合实现的弹道四端Aharonov-Casher环在量子干涉驱动的自旋霍尔效应中的横向自旋和零电荷电流的散粒噪声。栅电极对Rashba耦合的调制在自旋和电荷散粒噪声上都在环周围产生了建设性和破坏性自旋干扰的振荡信号,这与自旋霍尔电导的相应振荡不同,从而揭示了量子干扰-反向自旋的自旋分辨电荷电流之间的时间相关性。

著录项

  • 来源
    《Semiconductor science and technology》 |2009年第6期|51-72|共22页
  • 作者单位

    Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA;

    Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 01:32:01

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