The effect of the intrinsic layer on the reliability of nitride-based p-i-n photodetectors

摘要

This study successfully proves that the reliability of nitride-based p-i-n photodetectors (PDs) is highly sensitive to the thickness of intrinsic GaN layers. Results are based on i-GaN layers of 0.25 μm, 0.4 μm and 0.5 μm thicknesses. After current ageing, the p-i-n PDs with thin i-layers exhibited poor electrical strength. Increasing the thickness of the i-layer improved the electrical strength and ESD protection capability of PDs. This result is directly related to the impedance and dislocation density of the i-layer. However, the etched sidewall becomes a weak point when adopting a thicker i-layer.