机译:界面光子晶体共振反射器增强发光二极管发射的数值研究
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;
机译:纳米球光刻技术生成的具有不同几何形状的光子晶体增强了InGaN发光二极管的发光
机译:使用二维光子晶体和全向反射器的薄膜InGaN-GaN发光二极管增强的垂直提取效率
机译:利用光子晶体提高AlGaN纳米线发光二极管垂直发射的光提取效率
机译:由光子晶体修改的发光二极管增强的发射
机译:氮化镓光子晶体发光二极管的光提取和定向发射控制得到增强。
机译:光子晶体倒装芯片发光二极管的调制带宽和光提取效率的研究
机译:氧化硅纳米碗光子晶体增强了发光二极管的发光,而无电性能损失
机译:薄膜2-d光子晶体高性能发光二极管