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A numerical study of the emission enhancement of light emitting diodes with an interfacial photonic crystal resonance reflector

机译:界面光子晶体共振反射器增强发光二极管发射的数值研究

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摘要

In this paper, we propose a vertical structure of light emitting diodes (LEDs) grown on a substrate embedded with a photonic crystal reflector to avoid light absorption in the absorbed substrate. Photonic crystal (PC) patterns are embedded in the interface between the epitaxial layer and substrate. Numerical simulation results prove that for both polarizations, there exists a range of PC lattice period, within which 1D or 2D PC patterns can demonstrate high reflectivity and function as a resonance reflector. LEDs grown on such a high reflective patterned substrate can achieve great omnidirectional emission enhancement compared with the conventional LEDs. In addition, we found that the combining of PCs with the surface of such LEDs can further enhance the emission and redistribute the photon energy. Embedding such an interfacial PC reflector might prove to be a promising method for enhancing the extraction efficiency of high-brightness LEDs.
机译:在本文中,我们提出了一种垂直结构的发光二极管(LED),该结构生长在嵌入了光子晶体反射器的基板上,以避免被吸收的基板吸收光。光子晶体(PC)图案嵌入在外延层和衬底之间的界面中。数值模拟结果证明,对于两种偏振,都存在一定范围的PC晶格周期,在该范围内1D或2D PC图案可以显示出高反射率并起到共振反射器的作用。与常规LED相比,在这种高反射率图案化基板上生长的LED可以实现极大的全向发光增强。此外,我们发现PC与此类LED的表面结合可以进一步增强发射并重新分配光子能量。嵌入这样的界面PC反射器可能被证明是提高高亮度LED提取效率的有前途的方法。

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  • 来源
    《Semiconductor science and technology》 |2009年第5期|80-85|共6页
  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 01:31:56

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