机译:InGaN p-i-n同质结太阳能电池的显着光响应
Department of Physics, Xiamen University, Xiamen 361005, Fujian, People's Republic of China;
Department of Physics, Xiamen University, Xiamen 361005, Fujian, People's Republic of China Pen-Tung Sah MEMS Research Center, Xiamen University, Xiamen 361005, Fujian, People's Republic of China;
Department of Physics, Xiamen University, Xiamen 361005, Fujian, People's Republic of China;
Department of Physics, Xiamen University, Xiamen 361005, Fujian, People's Republic of China;
Department of Physics, Xiamen University, Xiamen 361005, Fujian, People's Republic of China;
Department of Physics, Xiamen University, Xiamen 361005, Fujian, People's Republic of China State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China;
机译:意外的背景浓度,铟成分和缺陷密度对InGaN p-i-n同质结太阳能电池性能的影响
机译:InGaN p-i-n同质和异质结太阳能电池的研究
机译:InGaN p-i-n同质结太阳能电池中光电流传输机制的温度和光强度依赖性
机译:基于ZnO的同质结p-i-n太阳能电池到自供电紫外线探测器
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机译:量子点同质结太阳能电池的杂价阳离子取代掺杂
机译:InGaN p-i-n同质结太阳能电池的显着光响应
机译:n / p和p / n磷化铟同质结太阳能电池近似优化设计与预测性能的理论比较