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The silicon on dust substrate path to make solar cells directly from a gaseous feedstock

机译:尘埃基板上的硅路径可直接由气态原料制造太阳能电池

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In this paper, we present a silicon on dust substrate (SDS) process, a new method for the growth of silicon ribbons. As a demonstration of the concept, we also present results on solar cells made of these new silicon ribbons. SDS ribbons were obtained directly from a gaseous feedstock by a fast CVD step using silane. The resulting self-supported intrinsic ribbons were microcrystalline and porous. To make these ribbon films suitable for photovoltaic applications, a novel recrystallization with an in situ doping step was developed. To this purpose, the ribbons were sprayed with boric acid and then recrystallized by float zone melting. Simple solar cells were prepared by employing: aluminium back contacts, Ti/Pd/Ag front grid contacts, with no anti-reflective coating, doping optimization, passivation or gettering. The 1-sun I-V characteristics of the cells were: V_(oc) ~ 530 mV and J_(sc) ~ 24 mA cm~(-2). The minority carrier diffusion length obtained from a spectral response at long wavelengths gave values of L_n ~ 70 μm.
机译:在本文中,我们提出了一种在粉尘衬底上的硅(SDS)工艺,这是一种生长硅带的新方法。为了说明这一概念,我们还将介绍由这些新型硅带制成的太阳能电池的研究结果。通过使用硅烷的快速CVD步骤从气态原料直接获得SDS带。所得的自支撑本征带为微晶且多孔的。为了使这些带状膜适用于光伏应用,开发了一种具有原位掺杂步骤的新型重结晶方法。为此,将条带喷涂硼酸,然后通过浮区熔化重结晶。通过使用以下方法制备简单的太阳能电池:铝背面触点,Ti / Pd / Ag前栅极触点,无抗反射涂层,掺杂优化,钝化或吸杂。电池的1-sun I-V特性为:V_(oc)〜530 mV和J_(sc)〜24 mA cm〜(-2)。从长波长的光谱响应获得的少数载流子扩散长度为L_n〜70μm。

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