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Monolithic integration of a ZnS MSM photodiode and an InGaP/GaAs HBT on a GaAs substrate

机译:ZnS MSM光电二极管和InGaP / GaAs HBT在GaAs衬底上的单片集成

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摘要

A monolithic integrated photoreceiver constructed of a ZnS MSM photodiode and an InGaP/GaAs HBT utilizing the pattern-oxide growth technique is demonstrated. The XRD and PL analyses of the as-grown ZnS epilayers exhibit good quality. The optical and electrical performance of the ZnS MSM photodiode, InGaP/GaAs HBT and integrated photoreceiver is estimated. Photocurrent induced from the ZnS MSM photodiode is amplified linearly by a common-emitter preamplifier based on an InGaP/GaAs HBT. The current amplification ratio and the voltage amplification sensitivity of the integrated photoreceiver are 18.2 and -8.7 mV μW~(-1), respectively. The ZnS-based integrated photoreceiver carried out successfully on a GaAs substrate indicates the potential of the pattern-oxide growth technique in the development for the II-VI WBG-based short wavelength integrated devices.
机译:展示了利用图案氧化物生长技术由ZnS MSM光电二极管和InGaP / GaAs HBT构成的单片集成光接收器。所生长的ZnS外延层的XRD和PL分析显示出良好的质量。估算了ZnS MSM光电二极管,InGaP / GaAs HBT和集成光电接收器的光学和电气性能。由ZnS MSM光电二极管感应的光电流由基于InGaP / GaAs HBT的共发射极前置放大器线性放大。集成光接收器的电流放大率和电压放大灵敏度分别为18.2和-8.7 mVμW〜(-1)。在GaAs衬底上成功进行的基于ZnS的集成光接收器表明,在基于II-VI WBG的短波长集成器件的开发中,图案氧化物生长技术的潜力。

著录项

  • 来源
    《Semiconductor science and technology》 |2009年第4期|p.66-72|共7页
  • 作者

    M Y Chen; C C Chang;

  • 作者单位

    Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 01:31:56

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