A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array

摘要

A voltage-tunable multispectral 320 × 256 infrared imaging focal plane array (FPA) is reported. It is based on InAs/GaAs quantum dots infrared phototdetctors (QDIP) with GaAs and In_(0.20)Ga_(0.80)As capping layers, corresponding to the extended middle-wave infrared (5-8 μm) and long-wave infrared (8-12 μm) detection bands, respectively. The FPA shows a noise-equivalent temperature difference of 172 mK at an operating temperature of 67 K. Voltage-tunable multispectral imaging was also achieved. Since each of the detection spectra of the QD FPA can be individually tuned by engineering its QD capping layer, this approach offers great flexibility in designing of a multispectral FPA.