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55 W Peak Power From 1100 Nm Wavelength 60 μm Broad-area Laser Diodes Enabled By Reduced Carrier Accumulation In The Waveguide

机译:1100 Nm波长产生的55 W峰值功率60μm广域激光二极管,通过减少载波中的载流子累积实现

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摘要

Optical power from 1100 nm broad-area laser diodes is found to be limited by the accumulation of minority carriers in the waveguide layer, caused by a small effective barrier between the quantum wells and the GaAs waveguide. This effect is visible as enhanced spontaneous emission at high currents. We show that increasing the number of QWs mitigates this effect and leads to higher emitted powers. Optimized devices deliver more than 55 W per 60 μm stripe width under 300 ns pulse operation. In this paper we present the experimental results of our study.
机译:发现来自1100 nm广域激光二极管的光功率受到量子阱和GaAs波导之间小的有效势垒造成的波导层中少数载流子积累的限制。在高电流下,这种效果可见于增强的自发发射。我们表明,增加量子阱的数量可以减轻这种影响并导致更高的发射功率。经过优化的器件在300 ns的脉冲操作下,每60μm的条带宽度可提供超过55 W的功率。在本文中,我们介绍了我们研究的实验结果。

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