The Role Of Ce Dopant On The Electrical Properties Of Gasb Single Crystals, Measured By Far-infrared Fourier Transform Spectroscopy

摘要

An analysis of the electronic properties of Ce-doped liquid-encapsulated Czochralski-grown GaSb single crystals has been carried out by using far-infrared Fourier transform spectroscopy. Some key parameters related to the electrical behaviour of these materials such as carrier type, density, mobility and plasma frequency have been determined by using this technique. These parameters have been compared to those obtained from Hall measurements. A comparative study has also been performed with new data from IRTF spectra obtained from pure (p-type) GaSb. The p-type nature of the Ce-doped GaSb crystals has been ascertained.