Wave Functions And Energy Levels Of Acceptors And Excitons In Gaas-type Semiconductors

摘要

A spherical model for shallow acceptors or excitons in a GaAs-type semiconductor is considered. The valence band is described by the Luttinger Hamiltonian (matrix 4×4). The integral equations for the wavefunctions in momentum representation are numerically solved. The functions of the ground state of the acceptor are expanded in a series over the Laguerre polynomials. The dependences of the coupling energy and the wavefunctions of the acceptor on the ratio of light and heavy masses of a hole are calculated. The effective constants of deformation potentials of the acceptor in a weakly strained crystal are determined.