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Optical Properties Of Cuin_(1-x)ga_xse_2 Quaternary Alloys For Solar-energy Conversion

机译:Cuin_(1-x)ga_xse_2四元合金的光能转换特性

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The optical properties of CuIn_(1-x)Ga_xSe_2 epitaxial single-crystal layers were determined by spectroscopic ellipsometry (SE) and complementary photoreflectance spectroscopy (PR) in dependence of composition. Accurate values of refractive index n and extinction coefficient κ and values of the fundamental and higher band-gap energies of quaternary selenides were obtained for six different Ga concentrations: x = 0.08, 0.19, 0.22, 0.50, 0.55, 0.82. In addition, for CuIn_(1-x)Ga_xSe_2 with x = 0.08 and 0.55, variable-angle ellipsometric measurements were performed. Only a very small contribution of the extraordinary component to the measured effective dielectric function was found, which implies that, in chalcopyrite single-crystal layers, the extraordinary component cannot be separated by altering the angle of incidence.
机译:CuIn_(1-x)Ga_xSe_2外延单晶层的光学性质通过光谱椭偏法(SE)和互补光反射光谱法(PR)确定,取决于组成。对于六个不同的Ga浓度,可以获得准确的折射率n和消光系数κ值以及四级硒化物的基带能级和更高的带隙能值:x = 0.08、0.19、0.22、0.50、0.55、0.82。此外,对于x = 0.08和0.55的CuIn_(1-x)Ga_xSe_2,进行了可变角度椭偏测量。发现异常成分对测量的有效介电功能的贡献很小,这意味着在黄铜矿单晶层中,无法通过改变入射角来分离异常成分。

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