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High dimensional addressable LED arrays based on type I GalnAsSb quantum wells with quinternary AlGalnAsSb barriers

机译:基于具有五级AlGalnAsSb势垒的I型GalnAsSb量子阱的高维可寻址LED阵列

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摘要

GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66μm are demonstrated. The application of quinternary AlGalnAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm~(-2) (A = 3.66 μm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 x 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed.
机译:展示了基于GaSb的I型InGaAsSb量子阱中红外(mid-IR)发光二极管(LED),其波长高达3.66μm。使用五元AlGalnAsSb势垒可改善量子阱中的空穴限制,并在100 K下实现1.3 W cm〜(-2)(A = 3.66μm)的LED辐射激发,这与黑体在1350 K下的发射率相对应。高对比设计的单个寻址512 x 512 LED阵列是使用湿法刻蚀设计和制造的。已经开发出一种用于中红外LED的准确表征技术。

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  • 来源
    《Semiconductor science and technology》 |2011年第8期|p.148-153|共6页
  • 作者单位

    State University of New York at Stony Brook, Stony Brook, NY 11794, USA;

    State University of New York at Stony Brook, Stony Brook, NY 11794, USA Power Photonic Corporation, Stony Brook, NY 11790, USA Author to whom any correspondence should be addressed;

    Power Photonic Corporation, Stony Brook, NY 11790, USA;

    State University of New York at Stony Brook, Stony Brook, NY 11794, USA;

    Air Force Research Laboratory, Eglin Air Force Base, FL 32542, USA;

    Air Force Research Laboratory, Eglin Air Force Base, FL 32542, USA;

    State University of New York at Stony Brook, Stony Brook, NY 11794, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 01:31:25

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