Effective density of states and carrier masses for Si/SiO_2 superlattices from first principles

摘要

Using a density-functional approach, we study the effective density of states and the effective masses of Si(0 0 1)/SiO_2 superlattices. We apply four models of the Si/SiO_2 interface and vary the Si layer thickness. The role of the confinement and the interface geometry on the effective density of states and effective masses is discussed in detail. Averages over the k-space in three and one dimensions are compared. The critical influence of the SiO_2 barriers on the transport of electrons and holes is investigated.