Band parameters of InGaAs/GaAs quantum dots: electronic properties study

摘要

We have made a systematic investigation of the band diagram calculation of strained and unstrained In_xGa_(1-x)As alloys in order to extract accurate and adapted parameters which are useful to the electronic properties of In_xGa_(1-x)As/GaAs quantum dots. As an application, the 40-band k.p model is used to describe the band offsets as well as the band parameters in the strained In_xGa_(1-x)As/GaAs system. The κ valence band parameter as well as g~* Lande factor depending of the indium concentration were estimated. These results are analyzed and compared with experiment.