Backside-configured surface plasmonic structure with over 40 times photocurrent enhancement

摘要

In this paper, we report a quantum dot infrared photodetector (QDIP) enhanced by a backside-configured surface plasmonic structure with an over 40 times peak photocurrent enhancement. The QDIP enhancement by the backside-configured plasmonic structure is compared with that by the top-configured plasmonic structure. The backside-configured plasmonic structure shows much higher photocurrent and photodetectivity D~* enhancement. We analyze the excitation of the surface plasmonic waves by the backside-configured and top-configured plasmonic structures. The higher enhancement is attributed to the more efficient surface plasmonic excitation by the backside-configured plasmonic structure.