Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

摘要

Gallium and aluminum co-doped ZnO (GAZO) thin films were deposited on glass substrate by using a facing targets sputtering system under various oxygen atmosphere, and the effect of oxygen on their structural, optical and electrical properties was investigated. All as-deposited GAZO thin films under oxygen atmosphere exhibited smooth surface and the lowest value of root-mean-square was 0.6 nm at oxygen 1 seem, this value is lower than that of film deposited at pure argon atmosphere. The (0 0 2) peak intensity was increased with increase in oxygen flow rate, the peak maximized at oxygen 1 seem. All films indicated high transmittance above 85% in the visible range and the lowest resistivity of 8.9 × 10~(-4) Ω· cm was obtained at pure argon atmosphere.