Influence of charged centres on transport properties of thin film electroluminescent devices

摘要

Charged centres exist in the phosphor layer of common thin film electroluminescent devices. In this article, the electron scattering process by these centres is studied through phase shift analysis. The scattering rates in different cases are gained and compared with other important scattering processes. The electron transport process is simulated by means of the Monte Carlo method. Quantitative results about the influence of charged centres on electron kinetic energy are gained.