High-temperature effects on the velocity overshoot of hot electrons in 6H- and 3C-SiC

摘要

Lattice temperature effects on the high-field transport transient of electrons in 6H- and 3C-SiC during the subpicosecond regime are studied. The calculations are performed considering a nonparabolic band structure, and the results are obtained through the numerical solution of Boltzmann-like transport equations for the electron drift velocity υ and energy ε within the momentum and relaxation time approximations, τ_p and τ_ε, respectively. It is shown that an increase of the lattice temperature reduces both the electron drift velocity and energy, being even able to preclude a drift velocity overshoot in 6H- and 3C-SiC. For a given electric field, the growth rate of the electron energy decreases strongly when the 6H- and 3C-SiC lattice temperatures are raised.