Tin oxide growth in nanoporous silicon: an approach to an efficient solid state electrode

摘要

In this preliminary work, we show the ability of the Sol-Gel technique to introduce a solid phase into the nanopores of porous silicon. From RBS-C analysis, a complete incorporation of both tin and oxygen atoms over most of the porous layer thickness has been evidenced. TEM observations revealed the presence of small crystallites of cassiterite embedded in the porous layer. Providing that the silicon porosity does not exceed 70%, this solid phase does not degrade the skeleton of porous silicon and does not inhibit photoluminescence.