Monte Carlo simulation of high-field transport and impact ionization in AIGaAs p~+ in~+ diodes

摘要

We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk Al_xGa_(1-x)As and also submicron p+in+ diodes for x ≤ 40%. The calculated impact ionization rates in bulk Al_xGa_(1-x)As compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p+in+ diodes were found to agree very well with our experimental results for both the analytical and the numerical models.