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Excellent rectifying characteristics in Au-CdTe diodes upon exposure to rf nitrogen plasma

机译:暴露于射频氮等离子体中的Au / n-CdTe二极管具有出色的整流特性

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Nitrogen plasma exposure (NPE) effects on indium doped bulk n-CdTe are reported here. Excellent rectifying characteristics of Au-CdTe Schottky diodes, with an increase in the barrier height, and large reverse breakdown voltages are observed after the plasma exposure. Surface damage is found to be absent in the plasma exposed samples. The breakdown mechanism of the heavily doped Schottky diodes is found to shift from the Zener to avalanche after the nitrogen plasma exposure, pointing to a change in the doping close to the surface which was also verified by C-V measurements. The thermal stability of the plasma exposure process is seen up to a temperature of 350 ℃, thereby enabling the high temperature processing of the samples for device fabrication. The characteristics of the NPE diodes are stable over a year implying excellent diode quality. A plausible model based on Fermi level pinning by acceptor-like states created by plasma exposure is proposed to explain the observations.
机译:此处报道了氮等离子体暴露(NPE)对铟掺杂的正CdTe的影响。等离子暴露后,Au / n-CdTe肖特基二极管具有出色的整流特性,且势垒高度增加,并且反向击穿电压较大。发现在暴露于等离子体的样品中不存在表面损伤。发现重掺杂的肖特基二极管的击穿机理在暴露于氮等离子体之后从齐纳转换为雪崩,这表明掺杂在靠近表面的变化也得到了C-V测量的证实。等离子体暴露工艺的热稳定性最高可达350℃,从而可以对器件制造的样品进行高温处理。 NPE二极管的特性在一年内保持稳定,这表明其具有出色的二极管质量。提出了一个基于费米能级钉扎的合理模型,该费米能级钉扎是通过等离子体暴露产生的类似受体的状态来解释的。

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