首页> 外文期刊>Semiconductor Science and Technology >Optical properties of thin films and quantum wells of In_xGa_(1-x)N/GaN and their dependence on laser irradiation
【24h】

Optical properties of thin films and quantum wells of In_xGa_(1-x)N/GaN and their dependence on laser irradiation

机译:In_xGa_(1-x)N / GaN的薄膜和量子阱的光学性质及其对激光辐照的依赖性

获取原文
获取原文并翻译 | 示例
       

摘要

We have grown bulk In_xGa_(1-x)N films and In_xGa_(1-x)N/GaN (x ≤ 0.1) multiple quantum well structures on Al_2O_3 substrates by electron cyclotron resonance assisted molecular beam epitaxy. We have not found any signs of phase separation in bulk films with low indium content, x ≤ 0.1. However, we observed inhomogeneous spatial distribution of indium with x varying from 0.1 to 0.2. In multiple quantum well structures with thin In_xGa_(1-x)N layers non-homogeneity was absent under certain growth conditions. Exposure of In_xGa_(1-x)N/GaN multiple quantum well structures to pulses of a nitrogen laser with power density I ≥ 10~6 W cm~(-2) led to irreversible changes in both luminescence and reflection spectra. These results, as well as chemical analysis of irradiated surface layers performed using Auger electron spectroscopy, indicate that intensive laser irradiation decreases nitrogen content in the crystal lattice of GaN and gives rise to surface metallization.
机译:我们已经通过电子回旋共振辅助分子束外延在Al_2O_3衬底上生长了In_xGa_(1-x)N薄膜和In_xGa_(1-x)N / GaN(x≤0.1)的多量子阱结构。在低铟含量x≤0.1的块状薄膜中,我们没有发现任何相分离的迹象。但是,我们观察到铟的空间分布不均匀,x在0.1到0.2之间变化。在具有较薄In_xGa_(1-x)N层的多量子阱结构中,在某些生长条件下不存在非均质性。 In_xGa_(1-x)N / GaN多量子阱结构暴露于功率密度I≥10〜6 W cm〜(-2)的氮气激光器的脉冲导致发光光谱和反射光谱均发生不可逆的变化。这些结果以及使用俄歇电子能谱进行的辐照表面层的化学分析表明,强激光辐照会降低GaN晶格中的氮含量,并引起表面金属化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号