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Raman microspectroscopy study of processing-induced phase transformations and residual stress in Silicon

机译:拉曼光谱研究硅中加工引起的相变和残余应力

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Raman spectroscopy was used for analysis of phase transformations and residual stress in machined silicon. Wear debris from dicing of silicon was scanned with a Raman spectrometer. Recorded spectra manifest the presence of amorphous Si, hexagonal phase (Si-IV), bc8 phase (Si-III) and pristine Si-I under residual stress. On surfaces of diced wafers as well as lapped silicon wafers, the r8 phase (Si-XII) was detected in addition to the above phases. The composition of phases in diced cross sections of silicon wafers differs dramatically between high and low speed cuts. The quantification of these phases was attempted by curve fitting each spectrum with corresponding peaks of each phase. Subsequently, relative intensity maps of specific phases were generated. Thus, Raman spectroscopy studies of machined surfaces demonstrated metallization of Si under a variety of machining conditions including lapping, grinding, scratching, dicing and slicing. All metastable phases of silicon disappear after etching and polishing of respective wafers. No evidence of phase transformations was found on a quartz-damaged silicon wafer surface. Residual stress having a characteristic distribution was observed in this case.
机译:拉曼光谱法用于分析机加工硅中的相变和残余应力。用拉曼光谱仪扫描来自硅切块的磨损碎片。记录的光谱表明在残余应力下存在非晶硅,六方相(Si-IV),bc8相(Si-III)和原始Si-I。在切块的晶片以及研磨的硅晶片的表面上,除了上述相以外,还检测到r8相(Si-XII)。硅片切块的横截面中的相组成在高速切割和低速切割之间差异很大。通过将每个光谱与每个相的相应峰进行曲线拟合来尝试量化这些相。随后,生成特定相的相对强度图。因此,对加工表面的拉曼光谱研究表明,在各种加工条件下,包括研磨,磨削,刮擦,划片和切片,硅均会金属化。硅的所有亚稳相在相应晶片的蚀刻和抛光后消失。在石英损坏的硅晶片表面上没有发现相变的证据。在这种情况下,观察到具有特征分布的残余应力。

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