Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

摘要

A microscopic study of 0.1 μm recessed gate b-doped AlInAs/GaInAs HEMTs has been performed by using a semiclassical Monte Carlo device simulation. The geometry and layer structure of the simulated HEMT is completely realistic, including recessed gate and δ-doping configuration. The usual T-gate technology is used to improve the device characteristics by reducing the gate resistance. For first time we take into account in the Monte Carlo simulations the effect of the T-gate and the dielectric used to passivate the device surface, which affects considerably the electric field distribution inside the device. The measured I_d-V_ds characteristics of a real device are favourably compared with the simulation results. When comparing the complete simulation with the case in which Poisson equation is solved only inside the semiconductor, we find that even if the static I-V characteristics remain practically unchanged, important differences appear in the dynamic and noise behaviour, reflecting the influence of an additional capacitance.