SiGe virtual substrate N-channel heterojunction MOSFETs

摘要

Heterojunction MOSFETs (HMOSFETs), grown on a virtual substrate of SiGe and having a strained silicon channel, have been fabricated. A conventional silicon MOS process was used, including dry thermal oxidation and high temperature source--drain annealing. Good transistor I-V characteristics were obtained for devices having drawn gate lengths between 150 nm and 10 μm and an extrinsic transconductance of 220 mS mm is reported for the 150 nm gate length device. Technology computer aided design (TCAD) is used to determine that the bulk low field mobility of the strained silicon which forms the channel is l500 cm~2 V~(-1) s~(-l), while the source-drain series resistance is 1.5 Ω mm. Good agreement between simulated and experimental I-V data is obtained.