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Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method

机译:PLD法制造的Pt / PZT / Pt铁电电容器的总剂量辐射效应

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In order to study total dose radiation effects of PbZr_xTi_(l-x)O_3 (PZT) film made with the pulsed excimer laser deposition (PLD) technique, hysteresis loops and capacitance-voltage (C-V) curves of PZT film capacitors have been measured before and after γ-ray irradiation. The results show that, in a range of 0--2 ×10~5 Gy (Si), with increasing total dose, the remanent polarization 2P_r increased while dielectric constant ε decreased. This can be explained by charges trapped by some defects during irradiation.
机译:为了研究采用脉冲准分子激光沉积(PLD)技术制成的PbZr_xTi_(lx)O_3(PZT)薄膜的总剂量辐射效应,在测量PZT薄膜电容器之前和之后的磁滞回线和电容-电压(CV)曲线γ射线照射。结果表明,在0--2×10〜5 Gy(Si)范围内,随着总剂量的增加,剩余极化2P_r增大,介电常数ε减小。这可以通过在照射过程中一些缺陷捕获的电荷来解释。

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