Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties

摘要

From the static current-voltage properties of irradiated silicon p-i-n diodes we develop a semi-quantitative model based on established relaxation semiconductor theory for forward and reverse bias. The properties of such diodes when used as photodiodes or ionized particle detectors are also described and analysed. The basic properties of this semi-insulating, relaxation semiconductor device are described together with possible applications. The same behaviour is observed in semi-insulating GaAs and other compound semiconductor diodes so that the analysis is also suitable for them and devices incorporating such diodes in substrates, such as MESFETS.