首页> 外文期刊>Semiconductor Science and Technology >X-ray photoelectron spectroscopy of GaSb nanoparticles embedded in SiO_2 matrices by radio-frequency magnetron co-sputtering
【24h】

X-ray photoelectron spectroscopy of GaSb nanoparticles embedded in SiO_2 matrices by radio-frequency magnetron co-sputtering

机译:射频磁控共溅射GaAs纳米粒子嵌入SiO_2基体的X射线光电子能谱

获取原文
获取原文并翻译 | 示例
       

摘要

GaSb-SiO_2 composite films were fabricated by radio-frequency magnetron co-sputtering. Transmission electron microscope (TEM) results exhibit that the GaSb nanoparticles were uniformly dispersed in SiO_2 matrices. The sizes of nanoparticles are in the range of 4-10 nm. X-ray photoelectron spectroscopy (XPS) analysis confirms the high purity of GaSb nanoparticles contained in the SiO_2 matrices and shows that the GaSb and SiO_2 exist in nonstoichiometry in the composite films due to the strong affinity of Sb and Si with oxygen. Room temperature optical transmission spectra show a very large blue shift of about 2.76 eV with respect to that of bulk GaSb, suggesting the existence of quantum size effects.
机译:通过射频磁控共溅射制备了GaSb-SiO_2复合薄膜。透射电子显微镜(TEM)结果表明,GaSb纳米颗粒均匀分散在SiO_2基体中。纳米粒子的尺寸在4-10nm的范围内。 X射线光电子能谱(XPS)分析证实了SiO_2基质中所含GaSb纳米颗粒的高纯度,并表明由于Sb和Si与氧的强亲和力,复合膜中的GaSb和SiO_2以非化学计量存在。室温光学透射光谱显示,相对于整体GaSb,蓝移非常大,约为2.76 eV,表明存在量子尺寸效应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号