Conduction band offset of the CdS/ZnSe heterostructure

摘要

The conduction band offset of the type II heterostructure CdS/ZnSe is determined from photoluminescence data of single quantum wells. The cubic quantum well samples have been grown by compound-source molecular-beam epitaxy. Photoluminescence spectra were measured at low temperatures and evaluated by fitting an effective mass model to the transition energies. A conduction band offset of (0.80 ± 0.1 ) eV and an effective electron mass for cubic CdS of (0.18 ± 0.05)m_0 were determined.