After a brief review of classification, application and sources of near-ultraviolet (UV) radiation the methods for fabricating UV photodetectors and characteristics of the photoconductive cells, P-n junction structure and Schottky barrier photodiodes are discussed. Characteristics of some light filters used in photodetectors and measuring devices are also reported. Now Si P-n structures are commonly used but Schottky diodes based on wide-gap (GaAsP GaP GaN, AlGaN, SiC) semiconductors are very attractive. They are insensitive to the infrared radiation and if necessary simple glass filters can be used for correcting the spectrum in such way that it covers just the near-UV region.
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机译：在简要回顾了近紫外线（UV）的分类，应用和来源之后，讨论了制造紫外线光电探测器的方法以及光电导电池的特性，P-n结结构和肖特基势垒光电二极管。还报告了用于光电探测器和测量设备的某些滤光片的特性。现在，通常使用Si P-n结构，但是基于宽能隙（GaAsP GaP GaN，AlGaN，SiC）半导体的肖特基二极管非常吸引人。它们对红外辐射不敏感，如有必要，可以使用简单的玻璃滤光片来校正光谱，使其仅覆盖近紫外线区域。
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