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A new analytical model to determine the drain-source series resistance of FOLD MOSFET

机译:确定FOLD MOSFET漏源串联电阻的新分析模型

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An analytical model to determine the intrinsic drain--source series resistance of a fully overlapped lightly doped drain (FOLD) MOSFET is presented. Considering outer and inner fringing capacitances and the depletion of the n- surface caused by the normal electric field from the gate, I-V characteristics, transconductance, drain conductance, channel resistance, cut-off frequency and transit time are studied. It is shown that, because of the lesser parasitic resistance of the FOLD structure, the device provides higher current driving ability than the lightly doped drain and can suppress hot carrier degradation by avoiding degradation due to the depletion of the n- region by electrons trapped in the sidewall. Some of the predictions of the model are verified with experimental data.
机译:提出了一种用于确定完全重叠的轻掺杂漏极(FOLD)MOSFET的本征漏极-源极串联电阻的分析模型。考虑到外部和内部边缘电容以及由栅极产生的法向电场引起的n表面损耗,研究了I-V特性,跨导,漏极电导,沟道电阻,截止频率和渡越时间。结果表明,由于FOLD结构的寄生电阻较小,该器件比轻掺杂漏极提供更高的电流驱动能力,并且可以通过避免由于俘获在其中的电子耗尽n-区而导致的退化来抑制热载流子退化。侧壁。该模型的某些预测已通过实验数据验证。

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