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NAND Flash Not Likely to Be Replaced Anytime Soon

机译:NAND闪存不太可能很快更换

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摘要

Albert Fazio is an Intel Fellow and director of memory technology development for Intel's Technology and Manufacturing Group. He is responsible for exploring and developing flash memory and multilevel cell memory technologies, as well as novel memory technology ideas. Fazio has been involved in various engineering roles in memory development programs, including SRAM, EPROM, E2PROM, NVRAM and flash memory.
机译:阿尔伯特·法齐奥(Albert Fazio)是英特尔研究员,也是英特尔技术与制造集团内存技术开发总监。他负责探索和开发闪存和多层单元存储器技术,以及新颖的存储器技术思想。 Fazio在存储器开发程序中曾担任过各种工程职务,包括SRAM,EPROM,E2PROM,NVRAM和闪存。

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