Integrated Optoelectronic Devices Based on Conjugated Polymers

摘要

An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly (hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field -effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of ＞10~6. The high mobility is attributed to the formation of extended polaron states as a result of local sefl-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.