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Growth of Uniformly Oriented Silica MFI and BEA Zeolite Films on Substrates

机译:均匀取向二氧化硅MFI和BEA沸石膜在基底上的生长

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摘要

Applications of zeolite films benefit from alignment of the integrated channels, but methods for film growth have nearly always introduced orientational randomization in the direction normal to the substrate. We now report facile methods to grow silicalite-1 films and pure silica beta zeolite films on substrates with straight or sinusoidal channels positioned uniformly upright at a thickness of up to 8 micrometers. Precise gel compositions and processing temperatures are critical to promote secondary growth on pre-formed oriented crystal monolayers while suppressing self-crystallization in the bulk medium. Preliminary results highlight the potential of these uniformly oriented films in the nonlinear optical response and separation of xylene isomers.
机译:沸石膜的应用受益于集成通道的对准,但是膜生长的方法几乎总是在垂直于基底的方向上引入取向随机化。现在,我们报告了在具有直立或正弦通道,厚度不超过8微米的直立或正弦通道的基材上生长silicalite-1薄膜和纯二氧化硅beta沸石薄膜的简便方法。精确的凝胶组成和加工温度对于促进预先形成的定向晶体单层的二次生长,同时抑制整体介质中的自结晶至关重要。初步结果突出了这些均匀取向的薄膜在非线性光学响应和二甲苯异构体分离中的潜力。

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  • 来源
    《Science》 |2011年第6062期|p.1533-1538|共6页
  • 作者单位

    Korea Center for Artificial Photosynthesis and Department of Chemistry, Sogang University, Seoul 121-742, Korea;

    Korea Center for Artificial Photosynthesis and Department of Chemistry, Sogang University, Seoul 121-742, Korea;

    Korea Center for Artificial Photosynthesis and Department of Chemistry, Sogang University, Seoul 121-742, Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 02:54:16

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