Memory characteristics of Au/pzt/bit/p-si ferroelectric diode

摘要

a ferroelectric memory diode consisting of Au/Pzt/Bit/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the mem- ory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymme- try saturated hysteresis loop with P_r=15 μC/cm~2 and E_c=48 kv/cm, and the decay in remanent po- larization was only 10/100 after 19~9 switching cycles, meanwhile the increase in coercive field was 12/100.