Static and Dynamic Characteristics of Antiparallel Diode as Part of Switching Power Module

A. V. Gorbatyuk; I. V. Grekhov; D. V. Gusin; B. V. Ivanov

首页> 外文期刊>Russian electrical engineering >Static and Dynamic Characteristics of Antiparallel Diode as Part of Switching Power Module

【24h】

Static and Dynamic Characteristics of Antiparallel Diode as Part of Switching Power Module

机译：作为开关电源模块一部分的反并联二极管的静态和动态特性

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A numerical simulation of the operation of a fast antiparallel diode in the switching power module of an autonomous voltage inverter is carried out. The time of turning off the transient and the static and transient heat losses in the diode are calculated as a function of the electrophysical parameters of the semiconductor diode structure.

机译：对自主电压逆变器的开关电源模块中快速反并联二极管的操作进行了数值模拟。关断瞬态的时间以及二极管中的静态和瞬态热损失是根据半导体二极管结构的电物理参数来计算的。

著录项

来源
《Russian electrical engineering》 |2010年第11期|p.619-626|共8页
作者
A. V. Gorbatyuk; I. V. Grekhov; D. V. Gusin; B. V. Ivanov;
展开▼
作者单位

Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia;

Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia;

St. Petersburg State Technical University, St. Petersburg, Russia;

Ul'yanov (Lenin) State University of Electrical Engineering, St. Petersburg, Russia;

展开▼
收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
voltage inverter; antiparallel diode; reverse recovery; carrier lifetime; injection efficiency;

机译：电压逆变器反并联二极管反向恢复;载流子寿命注射效率;

相似文献

外文文献
中文文献
专利

1. Self-Dynamic and Static Biasing for Output Power and Efficiency Enhancement of Complementary Antiparallel Diode Pair Frequency Tripler [J] . Dongha Shim, Wooyeol Choi, Jong-Wook Lee, Microwave and Wireless Components Letters, IEEE . 2017,第12期

机译：自动态和静态偏置可提高输出功率，并提高互补反并联二极管对频率三倍频器的效率
2. Class E tuned power amplifier with antiparallel diode or series diode at switch, with any loaded Q and switch duty cycle [J] . Kazimierczuk M.K., Puczko K. IEEE Transactions on Circuits and Systems . 1989,第9期

机译：E类调谐功率放大器，开关处带有反并联二极管或串联二极管，具有任何负载的Q和开关占空比
3. Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes [J] . Zhiyun Luo, Tianbing Chen, Cressler J.D., IEEE Transactions on Nuclear Science . 2003,第6期

机译：质子辐照对高压4H-SiC JBS开关二极管静态和动态特性的影响
4. Switching performance comparison of 1200 V and 1700 V SiC optimized half bridge power modules with SiC antiparallel schottky diodes versus MOSFET intrinsic body diodes [C] . Daniel Martin, W. Austin Curbow, Brett Sparkman, Annual IEEE Applied Power Electronics Conference and Exposition . 2017

机译：具有SiC反并联肖特基二极管的1200 V和1700 V SiC优化的半桥功率模块与MOSFET本征体二极管的开关性能比较
5. Dynamic modelling of thyristor-based static switching circuits with application to power systems. [D] . Perkins, Brian Kenneth. 1997

机译：基于晶闸管的静态开关电路的动态建模及其在电力系统中的应用。
6. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module [O] . Maosheng Zhang, Na Ren, Qing Guo, 2020

机译：1200V / 200A全SiC电源模块在开启瞬态时上侧和下侧开关的vgs特性的建模和分析
7. Switching Characteristics Enhancement of PT Type Power Diode using Proton Irradiation Technique [O] . Byoung-Gil Kim, Sung-Hwan Choi, Jong-Hun Lee, 2006

机译：使用质子辐射技术改进PT型功率二极管的增强
8. Static Longitudinal Aerodynamic Characteristics of a Hammerhead-Shaped Little Joe II - Lunar Module Model at Mach 0.30 to 1.20 [R] . Harris, C. D., Luoma, A. A. 1967

机译：锤头状小乔II - 月球模块模型的静态纵向气动特性，马赫数为0.30至1.20

Static and Dynamic Characteristics of Antiparallel Diode as Part of Switching Power Module

摘要

著录项

相似文献

相关主题

期刊订阅