Kinetic Study on Uniformity of AlGaAs Grown by MOVPE

摘要

The growth kinetic factors affecting the uniformity of AlGaAs in a horizontal atmospheric MOVPE (AP-MOVPE) reactor with a horizontal suspector were investigated. The decrease in the growth rate of AlGaAs (R_AlGaAs) in the flow direction is related to both the gas depletion and the decreasing growth rate of GaAs (R_GaAs) with the increasing gas temperature in this direction. The change of x in the flow direction ahs relations not only to the different changes of R_GaAs and R_AlAs (the growth rate of AlAs) with the gas temperate, according to which x will increase in the flow direction, but also to the higher depletion rate of Al containing species compared with that of Ga containing species, according to which x will decrease. Due to the similar reason, the loss of symmetry about the length axis of the suspect can also result in the monotone increase or decrease in thickness and x in the crosswise direction.