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首页> 外文期刊>Radioelectronics and Communications Systems >Quasi-Planar K-band Push-Push Low Phase Noise Oscillator Stabilized by Cavity Resonator
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Quasi-Planar K-band Push-Push Low Phase Noise Oscillator Stabilized by Cavity Resonator

机译:腔谐振器稳定的准平面K波段推挽式低相位噪声振荡器

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摘要

The results of developing a K-band (24 GHz) push-push low phase noise transistor oscillator have been presented. This oscillator is stabilized by a rectangular resonant metallic cavity. The power level of output signal is -9.5 dBm, the fundamental harmonic suppression is 21 dB, Single sideband (SSB) phase noise spectral density of-98 dBc/Hz at 10 kHz and -128 dBc/Hz at 100 kHz offset from the carrier frequency is at the level of dielectric resonator oscillators (DRO) scaled to the same frequency. The oscillator features a compact size, low cost quazi-planar design and it is built using commercially available off the shelf parts.
机译:提出了开发K波段(24 GHz)推挽式低相位噪声晶体管振荡器的结果。该振荡器由矩形谐振金属腔稳定。输出信号的功率电平为-9.5 dBm,基本谐波抑制为21 dB,单边带(SSB)相位噪声频谱密度在10 kHz时为-98 dBc / Hz,而在距载波100 kHz时为-128 dBc / Hz频率处于介电共振器(DRO)的水平,该比例缩放到相同的频率。该振荡器具有紧凑的尺寸,低成本的准平面设计,并使用现成的商用零件制造。

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