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Technical Topics

机译:技术专题

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In the 1960s, with the introduction of MOSFET (IGFET) and CMOS devices, many warnings were given in 7T and elsewhere of the destructive power of electrostatic discharges (ESD) and mains leakages which could easily puncture the thin insulated layers of semiconductor devices. Amateur Radio Techniques 7th ed, (p22), for example, includes a list of "special handling procedures" published originally by MCP Electronics some 30 years ago and intended to prevent the destruction of MOSFET devices not protected by built-in zener diodes before they were safely wired into equipment with bleeder resistors: Shorting wire or foil should be kept wrapped around leads of devices whenever possible, and always during storage. When this shorting wire is to be removed, hold the leads between finger and thumb of one hand.
机译:在1960年代,随着MOSFET(IGFET)和CMOS器件的推出,在7T及其他地方发出了许多警告,警告称静电释放(ESD)和干线泄漏的破坏性很容易刺穿半导体器件的薄绝缘层。例如,《业余无线电技术》第七版(p22)包含由MCP Electronics于30年前最初发布的“特殊处理程序”列表,目的是防止在未安装内置齐纳二极管保护的MOSFET器件之前将其销毁。已使用泄放电阻器安全地连接到设备中:应尽可能使短路线或铝箔包裹在设备的导线周围,并且始终在存储过程中。拆除该短路线时,请握住一只手的手指和拇指之间的导线。

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