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Role of a high gain of the medium in superradiance generation and in observation of coherent effects in semiconductor lasers

机译:介质的高增益在超辐射产生中以及在观察半导体激光器的相干效应中的作用

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摘要

A theoretical model of superradiant pulse generation in semiconductor laser structures is developed. It is shown that a high optical gain of the medium can overcome phase relaxation and results in a built-up superradiant state (macroscopic dipole) in an assembly of electron-hole pairs on a time scale much longer than the characteristic polar isation relaxation time T_2.A criterion of the superradiance generation is the condition ac_m T_2>1, where x is the gain coefficient and c_m is the speed of light in the medium. The theoretical model describes both qualitatively and quantitatively the author's own experimental results.
机译:建立了半导体激光器结构中超辐射脉冲产生的理论模型。结果表明,介质的高光学增益可以克服相位弛豫,并在比特征极化消散时间T_2长得多的时间尺度上在电子-空穴对组件中形成累积的超辐射态(宏观偶极子)超辐射产生的标准是条件ac_m T_2> 1,其中x是增益系数,c_m是介质中的光速。理论模型定性和定量地描述了作者自己的实验结果。

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