A theory of the generation of subpicosecond pulses in semiconductor injection lasers taking into account multimode generation and band structure of energy levels in doped semiconductors has been developed. Spatial-temporal dynamics of mode locking in a triple-section laser with a saturable absorber has been investigated. The analysis carried out has allowed us to determine the optimum conditions for the generation of ultimately short pulses. It has also permitted a study of the dependencies of parameters of the generated pulses on the pumping current, the reverse voltage, and a ratio of the lengths of the amplifying and absorbing sections.
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