COMPARISON OF CONVENTIONAL AND PSEUDOMORPHIC HEMTs PERFORMANCES BY DRAIN CURRENT TRANSIENT SPECTROSCOPY AND L.F. CHANNEL NOISE

摘要

This paper describes how in order to evaluate and compare the quality, in terms of trapping mechanisms, of conventional and pseudomorphic HEMTs (S-HEMTs and PM-HEMTs, respectively), isothermal drain current transients and G-R noise analysis have been investigated. The influence of HEMT epitaxial structures, growth techniques (MBE or MOCVD) and surface treatments on electrical performances are then discussed. Finally, the experimental data demonstrates the complementarity of these two techniques.